Composition and Luminescence Studies of InGaN Epilayers Grown at Different Hydrogen Flow Rates

Semiconductor Science and Technology - United Kingdom
doi 10.1088/0268-1242/28/6/065011
Full Text
Abstract

Available in full text

Date
Authors
Publisher

IOP Publishing

Related search

Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy

MRS Internet Journal of Nitride Semiconductor Research
1999English

Photoluminescence Properties of Erbium Doped InGaN Epilayers

Applied Physics Letters
AstronomyPhysics
2009English

Temperature Dependence Studies of Er Optical Centers in GaN Epilayers Grown by MOCVD

MRS Advances
2017English

Growth and Lipid Composition of Some Dematiaceous Hyphomycete Fungi Grown at Different Salinities

Microbiology
Microbiology
1989English

Development of Indium-Rich InGaN Epilayers for Integrated Tandem Solar Cells

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2013English

Composition of Different Composts and Vermicompost and Effects of Their Application Rates on Growth Parameters of Pot Grown Tomato

African Journal of Agricultural Research
2017English

Properties of GaN Epilayers Grown on Misoriented Sapphire Substrates

MRS Internet Journal of Nitride Semiconductor Research
1998English

Numerical Modeling of Flow Field in Morning Glory Spillways and Determining Rating Curve at Different Flow Rates

Civil Engineering Journal
2016English

Evaluation of Exhaled Nitric Oxide in Schoolchildren at Different Exhalation Flow Rates

Pediatric Research
Child HealthPediatricsPerinatology
2002English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy