Amanote Research

Amanote Research

    RegisterSign In

Characterisation and Analytical Modelling of GaN HEMT-based Varactor Diodes

Electronics Letters - United Kingdom
doi 10.1049/el.2015.2362
Full Text
Open PDF
Abstract

Available in full text

Categories
Electronic EngineeringElectrical
Date

November 5, 2015

Authors
A. HamdounL. RoyM. HimdiO. Lafond
Publisher

Institution of Engineering and Technology (IET)


Related search

Investigation and Mathematical Modelling for Different Scattering Mechanisms in AlGaN/GaN HEMT

2019English

Computational Modeling of Extreme Heat Flux Microcooler for GaN-Based HEMT

2015English

Oxygen Desorption Kinetics of ZnO Nanorod–gated AlGaN/GaN HEMT-based UV Photodetectors

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Design and Realization of Multi-Stage Radio Frequency Power Amplifiers Based on GaN HEMT

2017English

A Planar Distributed Channel AlGaN/GaN HEMT Technology

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2019English

Monolithic Integration of GaN HEMT With Silicon MOS Technology

English

Study on Small-Signal Modeling of GaN HEMT Devices

DEStech Transactions on Computer Science and Engineering
2018English

Broadband GaAs MESFET and GaN HEMT Resistive Feedback Power Amplifiers

IEEE Journal of Solid-State Circuits
Electronic EngineeringElectrical
2000English

The Research of Low-Noise Gan Hemt of Cryogenic Temperatures

National Association of Scientists
2020English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy