Design of High-Power Room-Temperature Continuous-Wave GaSb-based Type-I Quantum-Well Lasers With > 2.5 Μm
Semiconductor Science and Technology - United Kingdom
doi 10.1088/0268-1242/19/5/016
Full Text
Open PDFAbstract
Available in full text
Categories
Date
February 19, 2004
Authors
Publisher
IOP Publishing