Preparation of Fluoride Thin-Film EL Devices and Their Interface Properties.

Hyomen Kagaku
doi 10.1380/jsssj.15.370
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Surface Science Society Japan

Related search

Preparation and Characterization of Thin Films for EL Devices.

Hyomen Kagaku
1997English

Preparation of Aluminum Fluoride Film With Graphite Fluoride

Bulletin of the Chemical Society of Japan
Chemistry
1984English

Application of Molecular-Dynamics Simulation to Interface Stabilization in Thin-Film Devices

JSME International Journal Series B
2004English

Thin Film Electroluminescent Devices.

SHINKU
1987English

Recent Trends of PVD and CVD. Electroluminescence(EL). Light Emitting Thin Film Devices.

Journal of the Surface Finishing Society of Japan
1995English

Bright Green-Color Thin-Film EL Devices Grown by Rf-Sputtering.

The Journal of the Institute of Television Engineers of Japan
1988English

Properties of Amorphous Silicon Thin Films and Their Film Growth Processes.

Hyomen Kagaku
1989English

Interface Effects on Fatigue Properties of Pt/PZT/Pt Thin Film Capacitors

IEEJ Transactions on Fundamentals and Materials
Electronic EngineeringElectrical
2006English

Fundamentals of Polycrystalline Thin Film Materials and Devices

1991English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy