Individually-Addressed Planar Nanoscale InGaN-based Light Emitters

doi 10.1109/ipcon.2012.6358842
Full Text
Abstract

Available in full text

Date
Authors
Publisher

IEEE

Related search

Thermophotonic Cooling in GaAs Based Light Emitters

Applied Physics Letters
AstronomyPhysics
2019English

Silicon-Based Photonic Crystal Nanocavity Light Emitters

Applied Physics Letters
AstronomyPhysics
2006English

Advantages of Blue InGaN Light-Emitting Diodes With InGaN-AlGaN-InGaN Barriers

Applied Physics Letters
AstronomyPhysics
2012English

Promising Single-Photon Emitters With Reconfined InGaN/GaN Nanowire Quantum Dots

Quantum Engineering
2019English

Facile Formation of High-Quality InGaN/GaN Quantum-Disks-In-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters

English

Metal-Free Graphene as Transparent Electrode for GaN-Based Light-Emitters

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2013English

Nitride-Based Light-Emitting Diodes With InGaN∕GaN SAQD Active Layers

IEE Proceedings - Circuits, Devices and Systems
2004English

Characteristics of InxGa1-XN Based Light Emitting Diode With InGaN Barriers

International Journal of Computer Applications
2016English

Integration of Nanoscale Light Emitters and Hyperbolic Metamaterials: An Efficient Platform for the Enhancement of Random Laser Action

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy