Band Discontinuity Measurements of the Wafer Bonded InGaAs∕Si Heterojunction

Applied Physics Letters - United States
doi 10.1063/1.2745254
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Analysis of a Wafer Bonded Ge∕Si Heterojunction by Transmission Electron Microscopy

Applied Physics Letters
AstronomyPhysics
2007English

Energy Band Diagram of NiO: Lu2 O3/N-Si Heterojunction

Iraqi Journal of Science
GeneticsMolecular BiologyGeologyBiochemistryComputer ScienceBiotechnologyChemistry
2018English

First Principles Calculations of Band Discontinuity at Ultrathin SiO2/Si Interfaces

Hyomen Kagaku
2003English

N+ InGaAs/nGaAs Heterojunction Schottky Diodes With Low Barriers Controlled by Band Offset and Doping Level

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1985English

Si Wafer Bonded of A‐Si∕a‐SiNx Distributed Bragg Reflectors for 1.55‐μm-Wavelength Vertical Cavity Surface Emitting Lasers

Journal of Applied Physics
AstronomyPhysics
2005English

Reduction of Thermal Conductivity in Wafer-Bonded Silicon

Applied Physics Letters
AstronomyPhysics
2008English

Vertical InAs/InGaAs Heterostructure MOSFETs on Si

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2017English

TCO-Si Based Heterojunction Photovoltaic Devices

2011English

Integrated Waveguide PIN Photodiodes Exploiting Lateral Si/Ge/Si Heterojunction

Optics Express
OpticsAtomicMolecular Physics,
2017English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy