The Effect of C, Si, N, and P Impurities on Structural and Electronic Properties of Armchair Boron Nanotube

Journal of Nanostructure in Chemistry

doi 10.1007/s40097-017-0234-5

Full Text

Abstract

Available in

Date

Authors

Publisher

Springer Science and Business Media LLC

Related search

Control of Photoluminescence Properties of Si Nanocrystals by Simultaneously Doping N- And P-Type Impurities

Applied Physics Letters
AstronomyPhysics
2004English

Atomistic Study of the Structural and Electronic Properties of a-Si:H/C-Si Interfaces

Journal of Physics Condensed Matter
Materials ScienceCondensed Matter Physics
2014English

Effect of Boron on the Electronic Properties of Polycrystalline Graphite

TANSO
1970English

Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to N-Type Si

Materials Transactions
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2013English

Effect of Pressure on the Structural, Electronic and Mechanical Properties of Ultraincompressible W2B

RSC Advances
ChemistryChemical Engineering
2018English

Electronic and Structural Properties of Two Mirrored Boron-Nitride Nanocones With 240º Disclination

Brazilian Journal of Physics
AstronomyPhysics
2009English

Structural Properties of A-Si Films and Their Effect on Aluminum Induced Crystallization

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2015English

Preparation of ZnO Film on P-Si and I-V Characteristics of P-Si/N-ZnO

Materials Research
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2012English

Effect of Peierls Transition in Armchair Carbon Nanotube on Dynamical Behaviour of Encapsulated Fullerene

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy