Influence of Divacancy-Oxygen Defects on Recombination Properties of N-Si Subjected to Irradiation and Subsequent Annealing
Ukrainian Journal of Physics - Ukraine
doi 10.15407/ujpe63.12.1095
Full Text
Open PDFAbstract
Available in full text
Date
December 9, 2018
Authors
Publisher
Co. Ltd. Ukrinformnauka