Amanote Research

Amanote Research

    RegisterSign In

A Study of the Write Gate for Bloch Line Memory Devices.

Journal of the Magnetics Society of Japan
doi 10.3379/jmsjmag.11.143
Full Text
Open PDF
Abstract

Available in full text

Date

January 1, 1987

Authors
Y. MaruyamaR. SuzukiS. Konishi
Publisher

The Magnetics Society of Japan


Related search

Gate Recess Study for High Thermal Stability pHEMT Devices

EPJ Web of Conferences
AstronomyPhysics
2017English

Towards a Smart Cloud Gate for Smart Devices

2014English

Computer and Experimental Study of the Gate Dielectric in a Memory Transistor

Computational Methods and Experimental Measurements XIII
2007English

Copy-On-Write With Adaptive Differential Logging for Persistent Memory

IEICE Transactions on Information and Systems
Electronic EngineeringPattern RecognitionHardwareComputer VisionElectricalArchitectureArtificial IntelligenceSoftware
2019English

Integration of a Gate Electrode Into Carbon Nanotube Devices for Scanning Tunneling Microscopy

Applied Physics Letters
AstronomyPhysics
2005English

Compression Architecture for Bit-Write Reduction in Non-Volatile Memory Technologies

2014English

Ultra-Lightweight Implementations for Smart Devices – Security for 1000 Gate Equivalents

Lecture Notes in Computer Science
Computer ScienceTheoretical Computer Science
2008English

Stochastic Memory Devices for Security and Computing

Advanced Electronic Materials
OpticalElectronicMagnetic Materials
2019English

Garnet Materials for Magnetic Bubble Memory Devices.

Hyomen Kagaku
1987English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy