Atomic Layer-By-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD

Le Journal de Physique IV
doi 10.1051/jphyscol:19955130
Full Text
Abstract

Available in full text

Date
Authors
Publisher

EDP Sciences

Related search

Surface Smoothing of GaAs Microstructure by Atomic Layer Epitaxy

Applied Physics Letters
AstronomyPhysics
1999English

Atomic Layer Epitaxy of IV Group Semiconductors.

Hyomen Kagaku
1991English

Study on Property of Atomic Layer Epitaxy Growth of InN by Using Indium Chloride

Journal of Advanced Science
1992English

Formation of InGaAs Fins by Atomic Layer Epitaxy on InP Sidewalls

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2014English

Silicon Surface Passivation by Atomic Layer Deposited Al2O3

Journal of Applied Physics
AstronomyPhysics
2008English

Single Atomic Layer Ferroelectric on Silicon

English

Silicon Diffusion Control in Atomic-Layer-Deposited Al2O3/La2O3/Al2O3 Gate Stacks Using an Al2O3 Barrier Layer

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2015English

Suppression of Ion-Implantation Induced Porosity in Germanium by a Silicon Dioxide Capping Layer

Applied Physics Letters
AstronomyPhysics
2016English

Atomic-Layer Level Control in SiC Crystal Growth Using Gas Source Molecular Beam Epitaxy.

SHINKU
1992English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy