Turn-Around Phenomenon in the Degradation Trend of N-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stress
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan
doi 10.1143/jjap.49.074103
Full Text
Open PDFAbstract
Available in full text
Date
July 20, 2010
Authors
Publisher
Japan Society of Applied Physics