Amanote Research
Register
Sign In
Uniaxially Tensile Strained Accumulation-Mode Gate-All-Around Si Nanowire nMOSFETs
doi 10.1109/drc.2011.5994458
Full Text
Open PDF
Abstract
Available in
full text
Date
June 1, 2011
Authors
Mohammad Najmzadeh
Didier Bouvet
Wladek Grabinski
Adrian M. Ionescu
Publisher
IEEE
Related search
Ballistic Transport in Gate-All-Around Nanowire Transistors
The International Conference on Electrical Engineering
Ultra-Narrow Silicon Nanowire (～3 Nm) Gate-All-Around MOSFETs
Low-Voltage High-Speed Programming/Erasing Floating-Gate Memory Device With Gate-All-Around Polycrystalline Silicon Nanowire
Applied Physics Letters
Astronomy
Physics
Gate-All-Around Polycrystalline-Silicon Thin-Film Transistors With Self-Aligned Grain-Growth Nanowire Channels
Applied Physics Letters
Astronomy
Physics
Asymmetrically Strained All-Silicon Multi-Gate N-Tunnel FETs
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Linearity and Mobility Degradation in Strained Si MOSFETs With Thin Gate Dielectrics
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Fabrication of Dislocation-Free Tensile Strained Si Thin Films Using Controllably Oxidized Porous Si Substrates
Applied Physics Letters
Astronomy
Physics
Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs
Journal of Semiconductor Technology and Science
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
A Two-Dimensional Analytical Model of Fully Depleted Asymmetrical Dual Material Gate Double-Gate Strained-Si MOSFETs
Journal of Semiconductors
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
