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Drain Bias Dependent Model of Si-H Bond Dissociation for NBTI Characteristics of pMOSFETs
doi 10.7567/ssdm.2008.p-1-9
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Date
September 25, 2008
Authors
J. Yang
L. Huang
J. Pan
X. Liu
R. Han
J. Kang
Z. H. Gan
M. Liao
C. C. Liao
H. M. Wu
Publisher
The Japan Society of Applied Physics
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