High-Voltage AlGaN/GaN HEMTs on Si Substrate With Implant Isolation

doi 10.7567/ssdm.2011.p-6-7
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

2010English

Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Journal of the Korean Physical Society
AstronomyPhysics
2011English

Study on AlGaN/GaN Heterostructures Grown on Si Substrate

Journal of the Vacuum Society of Japan
SurfacesInstrumentationInterfacesSpectroscopyMaterials Science
2011English

Multi-Channel Tri-Gate Normally-on/Off AlGaN/GaN MOSHEMTs on Si Substrate With High Breakdown Voltage and Low ON-resistance

Applied Physics Letters
AstronomyPhysics
2018English

Reverse Gate Bias Stress on High-Voltage AlGaN/GaN-on-Si Heterostructure FETs

2012English

Hydrodynamic Modeling of AlGaN/GaN HEMTs

English

Enhancement-Mode AlGaN/GaN HEMTs With High Linearity Fabricated by Hydrogen Plasma Treatment

2009English

Effects of High-Temperature AIN Buffer on the Microstructure of AlGaN/GaN HEMTs

Semiconductors
Condensed Matter PhysicsOpticsMolecular Physics,OpticalAtomicMagnetic MaterialsElectronic
2013English

A Drain-Lag Model for AlGaN/GaN Power HEMTs

IEEE MTT-S International Microwave Symposium Digest
Electronic EngineeringRadiationElectricalCondensed Matter Physics
2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy