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A New Simplified Two-Dimensional Model for the Threshold Voltage of MOSFET's With Nonuniformly Doped Substrate
IEEE Transactions on Electron Devices
- United States
doi 10.1109/16.81629
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Abstract
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Categories
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Date
June 1, 1991
Authors
Unknown
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
