High Quality Al0.37In0.63N Layers Grown at Low Temperature (<300 °C) by Radio-Frequency Sputtering

Materials Science in Semiconductor Processing- United Kingdom

doi 10.1016/j.mssp.2019.04.029

Full Text

Abstract

Available in

Date

Authors

Publisher

Elsevier BV

Related search

Arsenic Doped P-Type Zinc Oxide Films Grown by Radio Frequency Magnetron Sputtering

Journal of Applied Physics
AstronomyPhysics
2009English

Fabrication of High-Quality Single-Crystal Cu Thin Films Using Radio-Frequency Sputtering

Scientific Reports
Multidisciplinary
2014English

Hydrogen-Doped High Conductivity ZnO Films Deposited by Radio-Frequency Magnetron Sputtering

Applied Physics Letters
AstronomyPhysics
2004English

HfSiON Films Deposited by Radio Frequency Reactive Sputtering

2013English

Growth Optimization and Structural Analysis for Ferromagnetic Mn-Doped ZnO Layers Deposited by Radio Frequency Magnetron Sputtering

Journal of Applied Physics
AstronomyPhysics
2006English

Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

1992English

Growth of TiO2 Rutile Films at Low Temperature by Reactive Sputtering.

SHINKU
1994English

Inhibited Oxidation in Low‐temperature Grown GaAs Surface Layers Observed by Photoelectron Spectroscopy

Applied Physics Letters
AstronomyPhysics
1996English

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of N-Type Β-FeSi2 Thin Films and P-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Advances in Materials Science and Engineering
Materials ScienceEngineering
2017English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy