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Understanding Charge Traps for Optimizing Si-Passivated Ge nMOSFETs
doi 10.1109/vlsit.2016.7573367
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Date
June 1, 2016
Authors
P. Ren
R. Gao
Z. Ji
H. Arimura
J. F. Zhang
R. Wang
M. Duan
W. Zhang
J. Franco
S. Sioncke
D. Cott
J. Mitard
L. Witters
H. Mertens
B. Kaczer
A. Mocuta
N. Collaert
D. Linten
R. Huang
A. V.-Y. Thean
G. Groeseneken
Publisher
IEEE
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