Point and Extended Defects in Ultra Wide Band Gap Β-Ga2O3 Interfaces

Microscopy and Microanalysis - United Kingdom
doi 10.1017/s1431927617007930
Full Text
Abstract

Available in full text

Categories
Instrumentation
Date
Authors
Publisher

Cambridge University Press (CUP)

Related search

Origin of Point Defects in Β-Ga2O3 Single Crystals Doped With Mg2+ Ions

Acta Physica Polonica A
AstronomyPhysics
2018English

Wide-Band-Gap Semiconductors

1993English

Effect of Point Defects on Band-Gap Properties in Diamond Structure Photonic Crystals

Journal of Applied Physics
AstronomyPhysics
2012English

Wide Band Gap Ferromagnetic Semiconductors and Oxides

Journal of Applied Physics
AstronomyPhysics
2003English

Impact of Proton Irradiation on Conductivity and Deep Level Defects in Β-Ga2O3

APL Materials
Materials ScienceEngineering
2019English

Behavior of Hydrogen in Wide Band Gap Oxides

Journal of Applied Physics
AstronomyPhysics
2007English

Ultra Wide Band Wireless Communications: A Tutorial

Journal of Communications and Networks
Computer NetworksInformation SystemsCommunications
2003English

Impact of Deep Level Defects Induced by High Energy Neutron Radiation in Β-Ga2O3

APL Materials
Materials ScienceEngineering
2019English

Ultra Wide Band (UWB) Interference - Assessment and Mitigation Studies

2006English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy