Point and Extended Defects in Ultra Wide Band Gap Β-Ga2O3 Interfaces

Microscopy and Microanalysis - United Kingdom
doi 10.1017/s1431927617007930
Full Text
Abstract

Available in full text

Categories
Instrumentation
Date
Authors
Publisher

Cambridge University Press (CUP)

Related search

Optimization of Gan Laser Diodes Using 1d and 2d Optical Simulations

English

Efficient 1D and 2D Barcode Detection Using Mathematical Morphology

Lecture Notes in Computer Science
Computer ScienceTheoretical Computer Science
2013English

Near-Field Optical Recording/Readout Using a 405nm Wavelength GaN Laser Diode

The Review of Laser Engineering
2007English

Assessing Salinity Leaching Efficiency in Three Soils by the HYDRUS-1D and -2d Simulations

Soil and Tillage Research
AgronomySoil ScienceCrop ScienceEarth-Surface Processes
2019English

Titanium Trisulfide (TiS3): A 2D Semiconductor With Quasi-1d Optical and Electronic Properties

Scientific Reports
Multidisciplinary
2016English

Development of Visible Range Semiconductor Laser Diodes Grown on C-Plane GaN Substrate

The Review of Laser Engineering
2010English

InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted From a Si Substrate

English

Light Extraction Improvement of GaN-based Light-Emitting Diodes Using Patterned Undoped GaN Bottom Reflection Gratings

2009English

1D “Spikelet” Projections From Heteronuclear 2D NMR Data—Permitting 1D Chemometrics While Preserving 2D Dispersion

Metabolites
BiochemistryEndocrinologyMetabolismMolecular BiologyDiabetes
2019English

The Nonlinear Behaviour of Laser Diodes Integrated With Semiconductor Optical Amplifiers

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy