Germanium-Source Tunnel Field Effect Transistors for Ultra-Low Power Digital Logic

doi 10.21236/ada561720
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Defense Technical Information Center

Related search

Ultra Low Power Analog to Digital Converter for Biomedical Applications

English

Towards an Ultra-Low-Power Architecture Using Single-Electron Tunneling Transistors

Proceedings - Design Automation Conference
ControlSystems EngineeringElectronic EngineeringSimulationHardwareComputer Science ApplicationsElectricalArchitectureModeling
2007English

Source-Gated Transistors Based on Solution Processed Silicon Nanowires for Low Power Applications

Advanced Electronic Materials
OpticalElectronicMagnetic Materials
2016English

Ultra-Low-Power Series Voltage Regulator for Passive RFID Transponders With Subthreshold Logic

Electronics Letters
Electronic EngineeringElectrical
2006English

Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

Advanced Electronic Materials
OpticalElectronicMagnetic Materials
2018English

Field Effect Transistors

2013English

Parallel Core−Shell Metal-Dielectric-Semiconductor Germanium Nanowires for High-Current Surround-Gate Field-Effect Transistors

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2006English

Field Effect Transistors

2016English

A Hybrid Thin-Film Logic Circuit Using Gallium Arsenide Field Effect Transistors

ElectroComponent Science and Technology
1978English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy