The Instability of the CV Characteristics Capacitance When Measuring AlGaN/GaN–heterostructures and the HEMT–transistors Based on Them
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
doi 10.17073/1609-3577-2016-2-115-123
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Date
June 30, 2016
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National University of Science and Technology MISiS