32 Nm Gate Length FinFET: Impact of Doping

International Journal of Computer Applications
doi 10.5120/21703-4816
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Foundation of Computer Science

Related search

Sub-50 Nm P-Channel FinFET

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2001English

FinFET Device Simulation and NAND Gate Implementation Using DG FinFET

Communications on Applied Electronics
2016English

Novel Dual-VTH Independent-Gate FinFET Circuits

2010English

Impact of Gate-Length Biasing on Threshold-Voltage Selection

English

Design Consideration and Impact of Gate Length Variation on Junctionless Strained Double Gate MOSFET

International Journal of Recent Technology and Engineering
EngineeringManagement of TechnologyInnovation
2019English

Statistical Reliability Analysis of NBTI Impact on FinFET SRAMs and Mitigation Technique Using Independent-Gate Devices

2012English

Advantage of Plasma Doping for Source/Drain Extension in Bulk-FinFET

2010English

Design Optimization and Modeling of Charge Trap Transistors (CTTs) in 14 Nm FinFET Technologies

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2019English

The Influence of Gate Poly-Silicon Oxidation on Negative Bias Temperature Instability in 3D FinFET

2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy