High-Resolution STEM Study of InGaAs/InAlAs and Si/Ge Heterostructures

Acta Crystallographica Section A Foundations of Crystallography
doi 10.1107/s0108767311098540
Full Text
Abstract

Available in full text

Date
Authors
Publisher

International Union of Crystallography (IUCr)

Related search

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

Acta Physica Polonica A
AstronomyPhysics
2011English

Study on Axial and Radial Heterostructures of Si-Ge and Si-SiGe Nanowires

Microscopy and Microanalysis
Instrumentation
2005English

Growth and Properties of InGaAs/FeAl/InAlAs/InP Heterostructures for Buried Reflector/Interconnect Applications in InGaAs Thermophotovoltaic Devices

1999English

Electroluminescence of Composite Channel InAlAs/InGaAs/InP/InAlAs High Electron Mobility Transistor

Journal of Applied Physics
AstronomyPhysics
2000English

Formation of Uniaxial Strained Ge via Control of Dislocation Alignment in Si/Ge Heterostructures

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Monte Carlo Study of Kink Effect in Short-Channel InAlAs/InGaAs High Electron Mobility Transistors

Journal of Applied Physics
AstronomyPhysics
2003English

Admittance Spectroscopy of InAlAs/InGaAs Single‐quantum‐well Structure With High Concentration of Electron Traps in InAlAs Layers

Journal of Applied Physics
AstronomyPhysics
1995English

Strain Distributions and Electronic Property Modifications in Si/Ge Axial Nanowire Heterostructures

Journal of Applied Physics
AstronomyPhysics
2009English

Inverted InAlAs/InGaAs Avalanche Photodiode With Low–High–Low Electric Field Profile

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2012English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy