Amanote Research

Amanote Research

    RegisterSign In

LPCVD Deposition of In-Situ Boron-Doped Polysilicon and Its Use in Polysilicon Emitter Transistors.

doi 10.22215/etd/1987-01356
Full Text
Open PDF
Abstract

Available in full text

Date

Unknown

Authors
Cheryl Maritan
Publisher

Carleton University


Related search

Emitter Resistance and Current Gain in Polysilicon Emitter Transistors.

English

A True Polysilicon Emitter Transistor.

English

Polarity Asymmetry of Polyoxide Grown on Phosphorus in Situ Doped Polysilicon

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2006English

Development and Characterization of Polysilicon Emitter Solar Cells.

English

Self-Heating Effects in Polysilicon Source Gated Transistors

Scientific Reports
Multidisciplinary
2015English

Low Temperature Polysilicon Thin Film Transistors in Advanced Display Technologies

2000English

Chemical Vapor Deposition Model of Polysilicon in a Trichlorosilane and Hydrogen System

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2008English

Hot-Wire Polysilicon Waveguides With Low Deposition Temperature

Optics Letters
OpticsAtomicMolecular Physics,
2013English

Study of Post-Deposition Contamination in Low-Temperature Deposited Polysilicon Films

1996English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy