Correlation Between Filament Distribution and Resistive Switching Properties in ReRAM Consisting of Transition-Metal-Oxides

Journal of the Vacuum Society of Japan - Japan
doi 10.3131/jvsj2.55.183
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Vacuum Society of Japan

Related search

A Physics-Based Model of Resistive Switching in Metal Oxides

2012English

Dependence of Reactive Metal Layer on Resistive Switching in a Bi-Layer Structure Ta/HfOx Filament Type Resistive Random Access Memory

Applied Physics Letters
AstronomyPhysics
2014English

Filament Formation and Erasure in Molybdenum Oxide During Resistive Switching Cycles

Applied Physics Letters
AstronomyPhysics
2014English

Approaches for Improving the Performance of Filament-Type Resistive Switching Memory

Chinese Science Bulletin
2011English

Interfacial Reactions and Resistive Switching Behaviors of Metal/NiO/Metal Structures

Applied Physics Letters
AstronomyPhysics
2009English

Defect Structure in Transition Metal Oxides.

Nihon Kessho Gakkaishi
1984English

Switching Mechanism of TaOx ReRAM

2009English

Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2016English

Conducting Filament Engineering by Triple-Layer RRAM for Uniform Resistive Switching

2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy