Doping of High-Al-Content AlGaN Grown by MOCVD

doi 10.3384/diss.diva-106733
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Linköping University Electronic Press

Related search

High Electron-Mobility ZnSe Films Grown by Low-Pressure MOCVD

1985English

MOCVD Growth and Electrical Studies of P-Type AlGaN With Al Fraction 0.35

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2006English

High DC Current Gain InGaP/GaAs HBTs Grown by LP-MOCVD

Electronics Letters
Electronic EngineeringElectrical
2000English

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

Cumhuriyet Science Journal
2018English

Structural Investigation of MOCVD Grown GaSb Islands by TEM

Acta Crystallographica Section A Foundations of Crystallography
2000English

Microstructure of GaN Grown on (111) Si by MOCVD

MRS Internet Journal of Nitride Semiconductor Research
1999English

Study on the Electrical Properties of NiZnO Films Grown by MOCVD

DEStech Transactions on Materials Science and Engineering
2017English

Investigation of AlGaN Buffer Layers on Sapphire Grown by MOVPE

2004English

HCl Flow-Induced Phase Change of , and Ga2O3 Films Grown by MOCVD

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy