Structural Investigation of MOCVD Grown GaSb Islands by TEM

Acta Crystallographica Section A Foundations of Crystallography
doi 10.1107/s0108767300024624
Full Text
Abstract

Available in full text

Date
Authors
Publisher

International Union of Crystallography (IUCr)

Related search

Doping of High-Al-Content AlGaN Grown by MOCVD

2014English

TEM Investigation of Er2O3 Thin Films Grown on Si (100) by Laser MBE

Microscopy and Microanalysis
Instrumentation
2010English

Microstructure of GaN Grown on (111) Si by MOCVD

MRS Internet Journal of Nitride Semiconductor Research
1999English

Study on the Electrical Properties of NiZnO Films Grown by MOCVD

DEStech Transactions on Materials Science and Engineering
2017English

Structural Investigation of Fe Silicide Films Grown by Pulsed Laser Deposition

Journal of Applied Physics
AstronomyPhysics
1994English

High Electron-Mobility ZnSe Films Grown by Low-Pressure MOCVD

1985English

Characterization of Carriers in GaSb∕InAs Superlattice Grown on Conductive GaSb Substrate

Applied Physics Letters
AstronomyPhysics
2008English

HCl Flow-Induced Phase Change of , and Ga2O3 Films Grown by MOCVD

English

Determination of Ga Auto-Incorporation in Nominal InAlN Epilayers Grown by MOCVD

Journal of Materials Chemistry C
Materials ChemistryChemistry
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy