Amanote Research
Register
Sign In
Numerical Study for Enhancement-Mode AlN/GaN/AlN N-Polar MISFET With Self-Aligned Source/Drain Regions
doi 10.2991/lemcs-14.2014.232
Full Text
Open PDF
Abstract
Available in
full text
Date
January 1, 2014
Authors
Lan Wei
Bin Li
Publisher
Atlantis Press
Related search
Current-Transport Mechanisms in the AlInN/AlN/GaN Single-Channel and AlInN/AlN/GaN/AlN/GaN Double-Channel Heterostructures
Thin Solid Films
Surfaces
Alloys
Optical
Interfaces
Metals
Materials Chemistry
Magnetic Materials
Films
Coatings
Electronic
Band Offsets of Non-Polar A-Plane GaN/AlN and AlN/GaN Heterostructures Measured by X-Ray Photoemission Spectroscopy
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Self-Assembled GaN Quantum Wires on GaN/AlN Nanowire Templates
Nanoscale
Materials Science
Nanotechnology
Nanoscience
Polar Interface Vibrations in GaN/AlN Quantum Dots: Essential Effects of Crystal Anisotropy
Physical Review B
Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
AlN/GaN Insulated Gate HEMTs With HfO2 Gate Dielectric
Electronics Letters
Electronic Engineering
Electrical
Self-Consistent Scattering Analysis of Al0.2Ga0.8N/AlN/GaN/AlN Heterostructures Grown on 6h-SiC Substrates Using Photo-Hall Effect Measurements
Journal of Physics Condensed Matter
Materials Science
Condensed Matter Physics
Polycrystalline Silicon Thin-Film Transistor With Self-Aligned SiGe Raised Source/Drain
Applied Physics Letters
Astronomy
Physics
Measuring Non-Uniformities in GaN/AlN Quantum Wells
Microscopy and Microanalysis
Instrumentation