Investigation and Comparison of Work Function Variation for FinFET and Ultra-Thin-Body SOI Devices Using a Voronoi Approach

doi 10.7567/ssdm.2012.e-2-2
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Floating Body and Hot Carrier Effects in Ultra-Thin Film SOI MOSFETs

Le Journal de Physique IV
1996English

Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2003English

Non-Quasi-Static RF Model for SOI FinFET and Its Verification

Journal of Semiconductor Technology and Science
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2010English

Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films

1997English

Ultra-Thin Benzocyclobutene Bonding of III–V Dies Onto SOI Substrate

Electronics Letters
Electronic EngineeringElectrical
2005English

Performance Evaluation of FD-SOI MOSFETS for Different Metal Gate Work Function

International Journal of VLSI Design & Communication Systems
2011English

Work Function and Band Alignment of Devices: Basics & Measurements

Journal of Surface Analysis
2018English

Work Function of Cu3Ge Thin Film

Microscopy and Microanalysis
Instrumentation
2016English

Extremely-Thin SOI for Mainstream CMOS: Challenges and Opportunities

2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy