Improved Off-Current and Subthreshold Slope in Aggressively Scaled Poly-Si TFTs With a Single Grain Boundary in the Channel

IEEE Transactions on Electron Devices - United States
doi 10.1109/ted.2003.821577
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser

ECS Transactions
Engineering
2013English

Laser Irradiated Sputter-Deposited Poly-Si TFTs

IEEJ Transactions on Fundamentals and Materials
Electronic EngineeringElectrical
1990English

A Source-Follower Type Analog Buffer Using Poly-Si TFTs With Large Design Windows

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2005English

Flexible Smart Display With Integrated Graphics Rasterizor Using Single Grain TFTs

Science, Technology and Arts Research Journal
2013English

Low-Voltage Organic Single-Crystal Field-Effect Transistor With Steep Subthreshold Slope

English

Thickness Dependence of Microstructure of Laterally Crystallized Poly-Si Thin Films and Electrical Characteristics of Low-Temperature Poly-Si TFTs

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2003English

Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position Inside a Location-Controlled Grain

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2005English

GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2018English

Low Voltage and Small Subthreshold Swing HfLaO/Pentacene Organic TFTs

2008English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy