(PDF) Si3N4/AlGaN/GaN–metal–insulator

Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors

Applied Physics Letters - United States

doi 10.1063/1.1412591

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October 22, 2001

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AIP Publishing

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Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors

Applied Physics Letters - United States

doi 10.1063/1.1412591

Full Text

Abstract

Categories

Date

Authors

Publisher

Related search

7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

Highly Doped Thin-Channel GaN-metal–semiconductor Field-Effect Transistors

Enhancement-Mode Metal–insulator–semiconductor GaN/AlInN/GaN Heterostructure Field-Effect Transistors on Si With a Threshold Voltage of +3.0 v and Blocking Voltage Above 1000 V

Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors

Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistors

Low Dielectric Constant-Based Organic Field-Effect Transistors and Metal-Insulator-Semiconductor Capacitors

Investigation of the Interface Between Silicon Nitride Passivations and AlGaN/AlN/GaN Heterostructures by C(V) Characterization of Metal-Insulator-Semiconductor-Heterostructure Capacitors

Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors

Influence of the Ratio of Gate Length to Drain-To-Source Distance on the Electron Mobility in AlGaN/AlN/GaN Heterostructure Field-Effect Transistors