(PDF) 7.5 kW/mm2 Current Switch Using AlGaN/GaN

7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

Electronics Letters - United Kingdom

doi 10.1049/el:20001401

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January 1, 2000

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Institution of Engineering and Technology (IET)

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7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

Electronics Letters - United Kingdom

doi 10.1049/el:20001401

Full Text

Abstract

Categories

Date

Authors

Publisher

Related search

Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors

Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistors

Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors

Highly Doped Thin-Channel GaN-metal–semiconductor Field-Effect Transistors

Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors

Thermal Properties of AlGaN/GaN High Electron Mobility Transistors on 4H and 6H SiC Substrates

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Enhancement-Mode Metal–insulator–semiconductor GaN/AlInN/GaN Heterostructure Field-Effect Transistors on Si With a Threshold Voltage of +3.0 v and Blocking Voltage Above 1000 V

Study of Gate Oxide Traps in HfO2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of Ac Transconductance Method