Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer Between High-Temperature-Grown GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan
doi 10.1143/jjap.37.l316
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Japan Society of Applied Physics

Related search

Optimization of Low Temperature GaN Buffer Layers for Halide Vapor Phase Epitaxy Growth of Bulk GaN

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2013English

Photoluminescence of Carbon in Situ Doped GaN Grown by Halide Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
1998English

Low-Etch-Pit-Density GaN Substrates by Regrowth on Free-Standing GaN Films

Applied Physics Letters
AstronomyPhysics
2002English

GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy

MRS Internet Journal of Nitride Semiconductor Research
1997English

Characterization of Vacancy-Type Defects in Heteroepitaxial GaN Grown by Low-Energy Plasma-Enhanced Vapor Phase Epitaxy

Journal of Applied Physics
AstronomyPhysics
2012English

Very High Quality AlN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2006English

Effect of GaN Cap Layer Grown at a Low Temperature on Electrical Characteristics of Al0.25Ga0.75N∕GaN Heterojunction Field-Effect Transistors

Applied Physics Letters
AstronomyPhysics
2004English

Effects of Growth Temperature on InN∕GaN Nanodots Grown by Metal Organic Chemical Vapor Deposition

Journal of Applied Physics
AstronomyPhysics
2008English

Effectiveness of TiN Porous Templates on the Reduction of Threading Dislocations in GaN Overgrowth by Organometallic Vapor-Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2005English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy