ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME

International Journal of High Speed Electronics and Systems - Singapore
doi 10.1142/s012915641350002x
Full Text
Abstract

Available in full text

Date
Authors
Publisher

World Scientific Pub Co Pte Lt

Related search

Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime

2007English

Analytical Modelling and Performance Analysis of Double-Gate MOSFET-based Circuit Including Ballistic/Quasi-Ballistic Effects

Molecular Simulation
Materials ScienceInformation SystemsCondensed Matter PhysicsSimulationChemical EngineeringModelingChemistry
2009English

Research on Carrier Correlation in Ballistic Transport Nano-MOSFETs

Open Materials Science Journal
Materials Science
2017English

Graphene Triangular Ballistic Rectifier: Fabrication and Characterisation

Journal of Electronic Materials
Electronic EngineeringCondensed Matter PhysicsOpticalMaterials ChemistryElectricalMagnetic MaterialsElectronic
2016English

Solid-State Thermionics and Thermoelectrics in the Ballistic Transport Regime

Journal of Applied Physics
AstronomyPhysics
2005English

Phonon Wave Propagation in Ballistic-Diffusive Regime

Journal of Applied Physics
AstronomyPhysics
2016English

The “Quasi-Uniform” Assumption in Animal and Computational Models of Non-Invasive Electrical Stimulation

Brain Stimulation
NeuroscienceNeurologyBiophysics
2013English

Quasi-Ballistic Electron Transport in Atomic Wires

2017English

Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime

Journal of Low Power Electronics and Applications
Electronic EngineeringElectrical
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy