Amanote Research

Amanote Research

    RegisterSign In

Analytical Modelling and Performance Analysis of Double-Gate MOSFET-based Circuit Including Ballistic/Quasi-Ballistic Effects

Molecular Simulation - United Kingdom
doi 10.1080/08927020902769836
Full Text
Open PDF
Abstract

Available in full text

Categories
Materials ScienceInformation SystemsCondensed Matter PhysicsSimulationChemical EngineeringModelingChemistry
Date

July 1, 2009

Authors
S. MartinieD. MunteanuG. Le CarvalJ.L. Autran
Publisher

Informa UK Limited


Related search

Double-Gate MOSFET Based Reconfigurable Cells

Electronics Letters
Electronic EngineeringElectrical
2007English

Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime

2007English

ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME

International Journal of High Speed Electronics and Systems
Electronic EngineeringHardwareOpticalElectricalArchitectureMagnetic MaterialsElectronic
2013English

Quasi-Ballistic Electron Transport in Atomic Wires

2017English

An Analytical Model for Ballistic Diode Based on Asymmetric Geometry

Journal of Applied Physics
AstronomyPhysics
2014English

Ballistic Transport in Gate-All-Around Nanowire Transistors

The International Conference on Electrical Engineering
2010English

Effects of Depleted Poly-Si Gate on MOSFET Performance

1990English

Design of Booth Multiplier Using Double Gate MOSFET

International Journal of Computer Applications
2017English

Force-Time Differences Between Ballistic and Non-Ballistic Half-Squats

Sports
2018English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy