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Publications by İ. Dökme
Frequency and Gate Voltage Effects on the Dielectric Properties and Electrical Conductivity of Al/SiO2/P-Si Metal-Insulator-Semiconductor Schottky Diodes
Journal of Applied Physics
Astronomy
Physics
Related publications
Temperature-Dependent Dielectric Properties of Au/Si3N4/N-Si (Metal—insulator—semiconductor) Structures
Chinese Physics B
Astronomy
Physics
Electrical Transport Properties of Isolated Carbon Nanotube/Si Heterojunction Schottky Diodes
Applied Physics Letters
Astronomy
Physics
Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric
Journal of Applied Physics
Astronomy
Physics
Improved Electrical Properties of Metal-Oxide-Semiconductor Capacitor With HfTiON Gate Dielectric by Using HfSiON Interlayer
Applied Physics Letters
Astronomy
Physics
Electrical and Photoconductivity Properties of Al/CdFe2O4/P-Si/Al Photodiode
Journal of Photonics
Impedance Spectroscopy of Al/AlN/N-Si Metal-Insulator-Semiconductor (MIS) Structures
Journal of Applied Physics
Astronomy
Physics
Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/N-Si (MFS) Capacitors
Journal of Polytechnic
Improved Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitor With HfTa-based Gate Dielectric by Using TaOxNy Interlayer
Applied Physics Letters
Astronomy
Physics
Effects of NO Annealing and GaO[sub X]N[sub Y] Interlayer on GaN Metal-Insulator-Semiconductor Capacitor With SiO[sub 2] Gate Dielectric
Journal of the Electrochemical Society
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