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Improved Electrical Properties of Metal-Oxide-Semiconductor Capacitor With HfTiON Gate Dielectric by Using HfSiON Interlayer
Applied Physics Letters
- United States
doi 10.1063/1.2798248
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Categories
Astronomy
Physics
Date
October 8, 2007
Authors
J. P. Xu
F. Ji
C. X. Li
P. T. Lai
J. G. Guan
Y. R. Liu
Publisher
AIP Publishing
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