Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by A S Askerov
The Size-Quantized Oscillations of the Optical-Phonon-Limited Electron Mobility in AlN/GaN/AlN Nanoscale Heterostructures
Journal of Physics: Conference Series
Astronomy
Physics
Related publications
Current-Transport Mechanisms in the AlInN/AlN/GaN Single-Channel and AlInN/AlN/GaN/AlN/GaN Double-Channel Heterostructures
Thin Solid Films
Surfaces
Alloys
Optical
Interfaces
Metals
Materials Chemistry
Magnetic Materials
Films
Coatings
Electronic
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
Band Offsets of Non-Polar A-Plane GaN/AlN and AlN/GaN Heterostructures Measured by X-Ray Photoemission Spectroscopy
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Carrier Density and Mobility Modifications of the Two-Dimensional Electron Gas Due to an Embedded AlN Potential Barrier Layer in AlxGa1−xN∕GaN Heterostructures
Journal of Applied Physics
Astronomy
Physics
Anisotropic Optical Response of GaN and AlN Nanowires
Journal of Physics Condensed Matter
Materials Science
Condensed Matter Physics
Electron-Polar Optical Phonon Scattering Suppression and Mobility Enhancement in Wurtzite Heterostructures
Journal of Physics: Conference Series
Astronomy
Physics
Electrical Characterization of MS and MIS Structures on AlGaN/AlN/GaN Heterostructures
Microelectronics Reliability
Surfaces
Electronic Engineering
Condensed Matter Physics
Electronic
Molecular Physics,
Nanoscience
Films
Optical
Electrical
Atomic
Magnetic Materials
Nanotechnology
Reliability
Safety
Coatings
Optics
Quality
Risk
Self-Consistent Scattering Analysis of Al0.2Ga0.8N/AlN/GaN/AlN Heterostructures Grown on 6h-SiC Substrates Using Photo-Hall Effect Measurements
Journal of Physics Condensed Matter
Materials Science
Condensed Matter Physics
Electron Transport Properties in Al0.25Ga0.75N/AlN/GaN Heterostructures With Different InGaN Back Barrier Layers and GaN Channel Thicknesses Grown by MOCVD
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
