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Publications by A. B. Horsfall
Dirac Point and Transconductance of Top-Gated Graphene Field-Effect Transistors Operating at Elevated Temperature
Journal of Applied Physics
Astronomy
Physics
Dose Rate Linearity in 4h-SiC Schottky Diode-Based Detectors at Elevated Temperatures
IEEE Transactions on Nuclear Science
Electronic Engineering
Nuclear
Nuclear Energy
High Energy Physics
Engineering
Electrical
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Top-Gated Graphene Field-Effect-Transistors Formed by Decomposition of SiC
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Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
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Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature
Influence of Metal Work Function on the Position of the Dirac Point of Graphene Field-Effect Transistors
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Interface Engineering for High-Performance Top-Gated MoS2 Field Effect Transistors
Direct-Written Polymer Field-Effect Transistors Operating at 20 MHz
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Conductivity of Suspended Graphene at the Dirac Point
Physical Review B
Probing Top-Gated Field Effect Transistor of Reduced Graphene Oxide Monolayer Made by Dielectrophoresis
Solid State Communications
Materials Chemistry
Chemistry
Condensed Matter Physics
Hysteresis Modeling in Graphene Field Effect Transistors
Journal of Applied Physics
Astronomy
Physics
