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Publications by A. D. Bykhovski

Accumulation Hole Layer in P-GaN/AlGaN Heterostructures

Applied Physics Letters

English

Quantum Shift of Band-Edge Stimulated Emission in InGaN–GaN Multiple Quantum Well Light-Emitting Diodes

Applied Physics Letters

English

Related publications

Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures

Journal of Applied Physics

English

Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs

English

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

Advances in Condensed Matter Physics

Condensed Matter Physics

English

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

Applied Physics Letters

English

VT-VSUB Characterization of AlGaN/GaN HFET With Regrown Epi-Layer on P-GaN

English

Study on AlGaN/GaN Heterostructures Grown on Si Substrate

Journal of the Vacuum Society of Japan

Instrumentation

Materials Science

English

Free Carrier Accumulation at Cubic AlGaN/GaN Heterojunctions

Applied Physics Letters

English

Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs

MRS Internet Journal of Nitride Semiconductor Research

English