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Publications by A. Higashisaka

Threshold Voltage Homogeneity and Electrical Properties of GaAs MESFETs on In-Doped Dislocation-Free Substrate

English

Related publications

Influence of Physical and Geometrical Parameters on Electrical Properties of Short Gate GaAs MESFETs

Semiconductor Physics, Quantum Electronics and Optoelectronics

Electronic Engineering

Molecular Physics,

Magnetic Materials

English

A New Simplified Two-Dimensional Model for the Threshold Voltage of MOSFET's With Nonuniformly Doped Substrate

IEEE Transactions on Electron Devices

Electronic Engineering

Magnetic Materials

English

Electrical Characterization of P‐GaAs Epilayers Disordered by Doped Spin-On-Glass

Journal of Applied Physics

English

Electrical Properties of Vacuum-Deposited GaAs Films

IEEJ Transactions on Fundamentals and Materials

Electronic Engineering

English

Increase of Acceptor Concentration in Nitrogen Doped ZnSe Film Grown on a Tilted GaAs Substrate

English

Effect of Screw-Dislocation on Electrical Properties of Spiral-Type Bi2Se3 Nanoplates

Chinese Journal of Chemical Physics

Theoretical Chemistry

English

Impurity-Free Disordering Mechanisms in GaAs-based Structures Using Doped Spin-On Silica Layers

Applied Physics Letters

English

Structural and Electrical Properties of BaCe0.90Y0.10O3-δ Thin Film on Al2O3 Substrate

Transactions of the Materials Research Society of Japan

English

Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate

Materials Science

Condensed Matter Physics

Mechanical Engineering

English