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Publications by A. St. Amour
Deep Photoluminescence in Si/Si1−xGex/Si Quantum Wells Created by Ion Implantation and Annealing
Applied Physics Letters
Astronomy
Physics
Related publications
Formation of Luminescent Si1-xGex/Si Quantum Wells With Abrupt Interfaces by Segregant-Assisted Growth
Effect of Helium Ion Implantation and Annealing on the Relaxation Behavior of Pseudomorphic Si1−xGex Buffer Layers on Si (100) Substrates
Journal of Applied Physics
Astronomy
Physics
Bandgap Narrowing in Heavily Doped Base Regions of Si/Si1-xGex/Si Heterojunction Bipolar Transistors.
HRTEM and EELS Analysis of Interfacial Reactions in Ti/Si1-xGex/Si(100)
Microscopy and Microanalysis
Instrumentation
Improved Hole Mobilities and Thermal Stability in a Strained‐Si∕strained‐Si1−yGey∕strained‐Si Heterostructure Grown on a Relaxed Si1−xGex Buffer
Applied Physics Letters
Astronomy
Physics
Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
Acta Physica Polonica A
Astronomy
Physics
Disordering of CdZnSe/ZnSe Strained Layer Superlattices by Si Ion-Implantation and Low-Temperature Annealing
Formation of High Quality Si1-xGex/Si Crystals Heterostructure Limited Area MBE Growth
Change of Electrophysical Properties of the Si(111) and Si(100) Surface in the Process of Ion Implantation and Next Annealing
Eurasian Journal of Physics and Functional Materials
