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Publications by A.S. Rysbaev
Change of Electrophysical Properties of the Si(111) and Si(100) Surface in the Process of Ion Implantation and Next Annealing
Eurasian Journal of Physics and Functional Materials
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Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
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Deep Photoluminescence in Si/Si1−xGex/Si Quantum Wells Created by Ion Implantation and Annealing
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Diffusion, Nucleation and Annealing of Co on the H-Passivated Si(100) Surface
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Segregation of Ion Implanted Sulfur in Si(100) After Annealing and Nickel Silicidation
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Effect of Helium Ion Implantation and Annealing on the Relaxation Behavior of Pseudomorphic Si1−xGex Buffer Layers on Si (100) Substrates
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Heteroepitaxial Growth of Sixfold Symmetric Osmium on Si (111) and Si (100)
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Modeling of Ion Implantation and Diffusion in Si
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Vibrational Properties of the Au-( 3×3 )/Si(111) Surface Reconstruction
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Improving Passivation Process of Si Nanocrystals Embedded in SiO2Using Metal Ion Implantation
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