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Publications by Amitabh Jain
The Effect of Preamorphization Energy on Ultrashallow Junction Formation Following Ultrahigh-Temperature Annealing of Ion-Implanted Silicon
Journal of Applied Physics
Astronomy
Physics
Related publications
The Effect of Radiation on Ion-Implanted Silicon Detectors
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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The Effect of Implantation, Energy, and Dose on Extended Defect Formation for MeV Phosphorus Implanted Silicon
Applied Physics Letters
Astronomy
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Microwave Annealing of Ion Implanted 6h-SiC
Materials Research Society Symposium - Proceedings
Mechanics of Materials
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Condensed Matter Physics
Mechanical Engineering
High Temperature Rapid Thermal Annealing of Phosphorous Ion Implanted InAs∕InP Quantum Dots
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The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon (Adv. Quantum Technol. 2/2018)
Advanced Quantum Technologies
Electron Microscopy Studies of Ion Implanted Silicon
Effect of Composition and High-Temperature Annealing on the Local Deformation Behavior of Silicon Oxycarbides
Journal of the European Ceramic Society
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Ceramics
Evolution of Vacancy-Related Defects Upon Annealing of Ion-Implanted Germanium
Physical Review B
Effect of Annealing Temperature on Optical and Electrical Properties of Metallophthalocyanine Thin Films Deposited on Silicon Substrate
Materials Science-Poland
Mechanics of Materials
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Condensed Matter Physics
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