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Publications by Anthony G. O’Neill
Improved Self-Gain in Deep Submicrometer Strained Silicon–germanium pMOSFETs With HfSiOx/TiSiN Gate Stacks
Microelectronic Engineering
Surfaces
Electronic Engineering
Condensed Matter Physics
Electronic
Molecular Physics,
Nanoscience
Optical
Electrical
Atomic
Magnetic Materials
Films
Nanotechnology
Optics
Coatings
Related publications
Asymmetrically Strained All-Silicon Multi-Gate N-Tunnel FETs
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Lasing in Strained Germanium Microbridges
Nature Communications
Astronomy
Genetics
Molecular Biology
Biochemistry
Chemistry
Physics
Dual Barrier InAlN/AlGaN/GaN-on-silicon High-Electron-Mobility Transistors With Pt- And Ni-Based Gate Stacks
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Silicon Diffusion Control in Atomic-Layer-Deposited Al2O3/La2O3/Al2O3 Gate Stacks Using an Al2O3 Barrier Layer
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Metal-Gate-Induced Reduction of the Interfacial Layer in Hf Oxide Gate Stacks
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Electron Emission From Deep Traps in Hydrogenated Amorphous Silicon and Silicon-Germanium: Meyer-Neldel Behavior and Ionization Entropy
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Linearity and Mobility Degradation in Strained Si MOSFETs With Thin Gate Dielectrics
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Spatial Distributions of Trapping Centers in HfO2∕SiO2 Gate Stacks
Applied Physics Letters
Astronomy
Physics
Gate-All-Around Polycrystalline-Silicon Thin-Film Transistors With Self-Aligned Grain-Growth Nanowire Channels
Applied Physics Letters
Astronomy
Physics