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Publications by Chris J. Palmstrom

Erratum To: Controlling N-Type Carrier Density From Er Doping of InGaAs With MBE Growth Temperature

Journal of Electronic Materials

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Related publications

P- And N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers

MRS Internet Journal of Nitride Semiconductor Research

English

Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-Type MOSFET

English

Doping and MBE Growth of ZnSe for Blue LEDs and LDs

English

N+ InGaAs/nGaAs Heterojunction Schottky Diodes With Low Barriers Controlled by Band Offset and Doping Level

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Segregation in InGaAs/GaAs Quantum Wells: MOCVD Versus MBE

Microscopy and Microanalysis

Instrumentation

English

Highp-Type Doping of ZnBeSe Using a Modified Delta-Doping Technique With N and Te

Journal of Applied Physics

English

N-Type Doping of Poly(p-Phenylene Vinylene) With Air-Stable Dopants

Applied Physics Letters

English

Erratum To: A Novel Esterase Sso2518 From Sulfolobus Solfataricus With a Much Lower Temperature Optimum Than the Growth Temperature

Biotechnology Letters

Applied Microbiology

English

Ultralow Resistance, Nonalloyed Ohmic Contacts to N-InGaAs

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English