Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Christoph Jungemann
High Performance, Strained-Ge, Heterostructure P-MOSFETs
Related publications
High-Quality NiGe/Ge Diodes for Schottky Barrier MOSFETs
Materials Science in Semiconductor Processing
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Vertical InAs/InGaAs Heterostructure MOSFETs on Si
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
Theory of Hole Mobility in Strained Ge and III-V P-Channel Inversion Layers With High-Κ Insulators
Journal of Applied Physics
Astronomy
Physics
DFM of Strained-Engineered MOSFETs Using Technology CAD
American Journal of Engineering and Applied Sciences
Geotechnical Engineering
Energy Engineering
Engineering Geology
Engineering
Chemical Engineering
Power Technology
Environmental Engineering
Computer Science
Pseudomorphic Silicon/Germanium Superlattices in MOS Capacitors Towards Sub-Surface Channel Heterostructure P-Type MOSFETs.
Axial Ge/Si Nanowire Heterostructure Tunnel FETs
Influence of Strain on the Electrical Properties of Ge Channel in Modulation-Doped P-Si0.5Ge0.5/Ge/Si1-xGex Heterostructure
Characterization of Strain in Si for High Performance MOSFETs
New Optical Transitions in Strained Si-Ge Superlattices
Physical Review B
