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Publications by D.B. Thomson

Effect of Implantation Temperature on Damage Accumulation in Ar - Implanted GaN

MRS Internet Journal of Nitride Semiconductor Research
2002English

The Los Alamos Flux Compression Program From Its Origin

1965English

Related publications

Room-Temperature Ferromagnetism of Cu-Implanted GaN

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Implantation-Induced Damage of 11b＋-Implanted P-Channel MNOS Transistors

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Ion Implantation of Epitaxial GaN Films: Damage, Doping and Activation

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Room Temperature Ferromagnetism in Cubic GaN Epilayers Implanted With Mn+ Ions

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Damage Accumulation in Si During High-Dose Self-Ion Implantation

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On the Magnetic Properties of Gd Implanted GaN

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Electrical Characterization of Rare-Earth Implanted GaN

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Effect of Beam Flux on Radiation Damage Accumulation in Ion-Bombarded Si

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Effect of GaN Cap Layer Grown at a Low Temperature on Electrical Characteristics of Al0.25Ga0.75N∕GaN Heterojunction Field-Effect Transistors

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