(PDF) Effect of GaN Cap Layer Grown at a Low Temperature on

Effect of GaN Cap Layer Grown at a Low Temperature on Electrical Characteristics of Al0.25Ga0.75N∕GaN Heterojunction Field-Effect Transistors

Applied Physics Letters - United States

doi 10.1063/1.1784038

Full Text

Open PDF

Abstract

Available in full text

Date

August 23, 2004

Authors

Publisher

AIP Publishing

Related search

Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors

Journal of Applied Physics

Astronomy

Physics

2005

English

Low Cost High Voltage GaN Polarization Superjunction Field Effect Transistors

Physica Status Solidi (A) Applications and Materials Science

Surfaces

Electronic Engineering

Condensed Matter Physics

English

Low Temperature P-GaN Rough Layer on In0.23Ga0.77N/GaN MQW LEDs

2003

English

Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors

Applied Physics Letters

Astronomy

Physics

2001

English

Gate Current Analysis of AlGaN/GaN on Silicon Heterojunction Transistors at the Nanoscale

Applied Physics Letters

Astronomy

Physics

2012

English

Highly Doped Thin-Channel GaN-metal–semiconductor Field-Effect Transistors

Applied Physics Letters

Astronomy

Physics

2001

English

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer Between High-Temperature-Grown GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

The Effect of Strain Relaxation on Electron Transport in Undoped Al0.25Ga0.75N/GaN Heterostructures

Physica B: Condensed Matter

Electronic Engineering

Condensed Matter Physics

English

Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors

Applied Physics Letters

Astronomy

Physics

2001

English

Amanote Research

Effect of GaN Cap Layer Grown at a Low Temperature on Electrical Characteristics of Al0.25Ga0.75N∕GaN Heterojunction Field-Effect Transistors

Applied Physics Letters - United States

doi 10.1063/1.1784038

Full Text

Abstract

Categories

Date

Authors

Publisher

Related search

Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors

Low Cost High Voltage GaN Polarization Superjunction Field Effect Transistors

Low Temperature P-GaN Rough Layer on In0.23Ga0.77N/GaN MQW LEDs

Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors

Gate Current Analysis of AlGaN/GaN on Silicon Heterojunction Transistors at the Nanoscale

Highly Doped Thin-Channel GaN-metal–semiconductor Field-Effect Transistors

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer Between High-Temperature-Grown GaN

The Effect of Strain Relaxation on Electron Transport in Undoped Al0.25Ga0.75N/GaN Heterostructures

Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors