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Publications by Daiki Yasui

Study on AlN Growth Conditions for Hydride Vapor Phase Epitaxy

Transactions of the Materials Research Society of Japan
2015English

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Growth of an AlN Epilayer by Using Mixed-Source Hydride Vapor Phase Epitaxy

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Characterization of Free-Standing Hydride Vapor Phase Epitaxy GaN

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Very High Quality AlN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy

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Growth of GaN Film on 150mm Si (111) Using Multilayer AlN∕AlGaN Buffer by Metal-Organic Vapor Phase Epitaxy Method

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Exciton Localization on Basal Stacking Faults in A-Plane Epitaxial Lateral Overgrown GaN Grown by Hydride Vapor Phase Epitaxy

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AlGaAsSb Vapor Phase Epitaxy and Laser Program.

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Growth Characteristics of AlN on Sapphire Substrates by Modified Migration-Enhanced Epitaxy

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Catalyst-Free Growth of GaAs Nanowires by Selective-Area Metalorganic Vapor-Phase Epitaxy

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GaN/AlN Resonant Tunneling Diode With High Peak-To-Valley Current Ratio Grown by Metal-Organic Vapor Phase Epitaxy

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