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Publications by Dongxu Yang

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

English

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Computational Study of Pattern Formation for Chemically Amplified Resists in Extreme Ultraviolet Lithography

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Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography.

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Pushing Extreme Ultraviolet Lithography Development Beyond 22 Nm Half Pitch

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Chemically Amplified Si-Contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and Its Application to Bi-Layer Resist Process.

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Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution With Sensitivity for Next-Generation Lithography

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Study on Resist Performance of Chemically Amplified Molecular Resists Based on Cyclic Oligomers

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Guest Editorial: Extreme Ultraviolet Interference Lithography

Journal of Micro/ Nanolithography, MEMS, and MOEMS

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Intense Plasma Discharge Source at 135 Nm for Extreme-Ultraviolet Lithography

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Power Scaling of an Extreme Ultraviolet Light Source for Future Lithography

Applied Physics Letters

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